- 您现在的位置：买卖IC网 > Sheet目录486 > NTD23N03R-1G (ON Semiconductor)MOSFET N-CH 25V 3.8A IPAK
NTD23N03R
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current
(V GS = ± 20 Vdc, V DS = 0 Vdc)
V(br) DSS
I DSS
I GSS
25
?
?
?
?
28
?
?
?
?
?
?
1.0
10
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 4.5 Vdc, I D = 6 Adc)
(V GS = 10 Vdc, I D = 6 Adc)
Forward Transconductance (Note 3)
(V DS = 10 Vdc, I D = 6 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
?
?
1.8
?
50.3
32.3
13
2.0
?
60
45
?
Vdc
mV/ ° C
m W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
225
?
pF
Output Capacitance
Transfer Capacitance
(V DS = 20 Vdc, V GS = 0 V, f = 1 MHz)
C oss
C rss
?
?
108
48
?
?
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
?
2.0
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V GS = 10 Vdc, V DD = 10 Vdc,
I D = 6 Adc, R G = 3 W )
t r
t d(off)
t f
?
?
?
14.9
9.9
2.0
?
?
?
Gate Charge
(V GS = 4.5 Vdc, I D = 6 Adc,
V DS = 10 Vdc) (Note 3)
Q T
Q 1
Q 2
?
?
?
3.76
1.7
1.6
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 6 Adc, V GS = 0 Vdc) (Note 3)
(I S = 6 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 6 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.87
0.74
8.7
5.2
3.5
0.003
1.2
?
?
?
?
?
Vdc
ns
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTD24N06-001
MOSFET N-CH 60V 24A IPAK
NTD24N06LG
MOSFET N-CH 60V 24A DPAK
NTD25P03L1G
MOSFET P-CH 30V 25A IPAK3
NTD2955PT4G
MOSFET P-CH 60V 12A DPAK
NTD3055-094G
MOSFET N-CH 60V 12A DPAK
NTD3055-150T4
MOSFET N-CH 60V 9A DPAK
NTD3055L104
MOSFET N-CH 60V 12A DPAK
NTD3055L170-001
MOSFET N-CH 60V 9A IPAK
相关代理商/技术参数
NTD23N03RG
功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD23N03RT4
功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD23N03RT4G
功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD2405
功能描述:RELAY SSR AC OUT 240VAC 5A PNL RoHS:是 类别:继电器 >> 固态 系列:NTD 其它有关文件:AQx REACH Cert of Compliance 特色产品:AQY Series Relays 标准包装:1 系列:PhotoMOS™ AQY 电路:SPST-NO（1 Form A） 输出类型:AC，DC（RF） 导通状态电阻:1.25 欧姆 负载电流:250mA 输入电压:1.3VDC 电压 - 负载:0 ~ 40 V 安装类型:表面贴装 端接类型:SMD（SMT）接片 封装/外壳:4-SMD（0.175"，4.45mm） 供应商设备封装:4-SSOP 包装:Digi-Reel® 继电器类型:继电器 其它名称:255-2683-6
NTD24061
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 Volt, 24 Amp Na??Channel DPAK
NTD2406-1
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 V, 24 A, N-Channel DPAK
NTD24061G
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 Volt, 24 Amp Na??Channel DPAK
NTD2410
功能描述:固态继电器-工业安装 10A TRIAC OUTPUT
RoHS:否 制造商:Crydom 控制电压范围:4 VDC to 32 VDC 负载电压额定值:7 VDC to 72 VDC 负载电流额定值:160 A 触点形式: 输出设备:SSR 安装风格:Panel
